JPS6238869B2 - - Google Patents
Info
- Publication number
- JPS6238869B2 JPS6238869B2 JP53014232A JP1423278A JPS6238869B2 JP S6238869 B2 JPS6238869 B2 JP S6238869B2 JP 53014232 A JP53014232 A JP 53014232A JP 1423278 A JP1423278 A JP 1423278A JP S6238869 B2 JPS6238869 B2 JP S6238869B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxide
- oxide layer
- forming
- phosphorus
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1423278A JPS54107270A (en) | 1978-02-10 | 1978-02-10 | Semiconductor device and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1423278A JPS54107270A (en) | 1978-02-10 | 1978-02-10 | Semiconductor device and its production |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54107270A JPS54107270A (en) | 1979-08-22 |
JPS6238869B2 true JPS6238869B2 (en]) | 1987-08-20 |
Family
ID=11855317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1423278A Granted JPS54107270A (en) | 1978-02-10 | 1978-02-10 | Semiconductor device and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54107270A (en]) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63149877U (en]) * | 1987-03-20 | 1988-10-03 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6107194A (en) * | 1993-12-17 | 2000-08-22 | Stmicroelectronics, Inc. | Method of fabricating an integrated circuit |
US6284584B1 (en) | 1993-12-17 | 2001-09-04 | Stmicroelectronics, Inc. | Method of masking for periphery salicidation of active regions |
US5439846A (en) * | 1993-12-17 | 1995-08-08 | Sgs-Thomson Microelectronics, Inc. | Self-aligned method for forming contact with zero offset to gate |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5528434B2 (en]) * | 1974-01-29 | 1980-07-28 |
-
1978
- 1978-02-10 JP JP1423278A patent/JPS54107270A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63149877U (en]) * | 1987-03-20 | 1988-10-03 |
Also Published As
Publication number | Publication date |
---|---|
JPS54107270A (en) | 1979-08-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3909320A (en) | Method for forming MOS structure using double diffusion | |
JPH0640582B2 (ja) | 絶縁ゲ−ト電界効果トランジスタの製造方法 | |
JPS6252963A (ja) | バイポ−ラトランジスタの製造方法 | |
JPH0348656B2 (en]) | ||
US4175317A (en) | Method for manufacturing junction type field-effect transistors | |
JPH0828379B2 (ja) | 半導体装置の製造方法 | |
JPS6238869B2 (en]) | ||
JPS63174366A (ja) | 半導体装置の製造方法 | |
JPH0127589B2 (en]) | ||
JPS6143858B2 (en]) | ||
JPH0239091B2 (en]) | ||
JPH01220438A (ja) | 半導体装置の製造方法 | |
JPS6117154B2 (en]) | ||
JPH02312244A (ja) | 半導体装置の製造方法 | |
JP3077638B2 (ja) | 半導体装置の製造方法 | |
JPH04101432A (ja) | Mis型トランジスタの製造方法 | |
JPS61139057A (ja) | 半導体集積回路装置の製造方法 | |
JPH05347353A (ja) | 半導体装置の製造方法 | |
JPS6370458A (ja) | 半導体装置の製造方法 | |
JPH0258781B2 (en]) | ||
JPH02253655A (ja) | 半導体装置の製造方法 | |
JPS605072B2 (ja) | 絶縁ゲ−ト型電界効果半導体装置の製造方法 | |
JPS6266678A (ja) | 半導体装置の製造方法 | |
JPH02135738A (ja) | 半導体装置の製造方法 | |
JPH01214166A (ja) | バイポーラトランジスタを有する半導体集積回路装置 |